کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1528191 1511865 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A new approach towards the growth of cadmium sulphide thin film by CBD method and its characterization
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
A new approach towards the growth of cadmium sulphide thin film by CBD method and its characterization
چکیده انگلیسی

Cadmium sulphide thin films were deposited by the chemical bath deposition method using tartaric acid as a complexing agent and annealed at different temperature in nitrogen atmosphere and characterized. The crystallographic structure and the crystallite size were studied by the X-ray diffraction (XRD) pattern. Transmittance of the deposited film is significantly higher in the visible region. The optical band-gap of deposited film is 2.4 eV and it decreases with increase in annealing temperature. Temperature dependence of resistivity confirmed the semiconducting behaviour of the film. Scanning electron micrographs (SEM) showed the presence of grain particles of size < 1 μm. X-ray photoelectron spectroscopy (XPS) studies supported the composition of cadmium sulphide thin film determined by EMPA and also indicated the presence of carbon and oxygen as impurity in the film.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 95, Issues 2–3, 10 February 2006, Pages 235–241
نویسندگان
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