Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes

- Ruthenium was deposited on 4H-SiC to study interface reactions.
- Ru-4H-SiC Schottky diodes with nickel as ohmic contact were fabricated.
- RBS analysis indicated Ru2Si3 formation at 700 °C, and Ru diffusion at 600 °C.
- Raman spectroscopy indicated graphite formation at 1000 °C.
- The Schottky barrier diodes were still functional after 1000 °C vacuum annealing.