Ion-beam synthesis and characterization of narrow-gap A3B5 nanocrystals in Si: Effect of implantation and annealing regimes

Highlights
- Ion implantation and annealing were used to synthesize InAs and GaSb nanocrystals (NCs) in Si.
- Nanocrystal size is varied from 2 to 100 nm depending on implantation and annealing regimes and on getter layer presence.
- Strain relaxation in A3B5/Si systems results in a misfit dislocation networks creation at A3B5 nanoclusters/Si interfaces.
- An anomalous bright “glowing” of nanocrystal/Si interfaces in dark-field TEM images is observed and discussed, too.