کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1529292 | 995747 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
High-k hafnium-silicate films were deposited by RF magnetron sputtering approach on silicon wafer. The microstructure has been investigated using the combination of transmission electron microscopy and atom probe tomography. It was evidenced that the elaborated HfSiO thin films subsequently annealed at 950 °C during 15 min leads to a complex phase separated nanostructure where silica, hafnia and silicon nanoclusters coexist. The formation of silicon nanoclusters in hafnia-based host was never reported before. The results demonstrate the capability of RF magnetron sputtering to pave the way for realization of nanomemory devices based on silicon clusters embedded in high-k matrix.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 177, Issue 10, 5 June 2012, Pages 717–720
Journal: Materials Science and Engineering: B - Volume 177, Issue 10, 5 June 2012, Pages 717–720
نویسندگان
Etienne Talbot, Manuel Roussel, Larysa Khomenkova, Fabrice Gourbilleau, Philippe Pareige,