Chemical vapor deposition of boron- and nitrogen-containing graphene thin films

Boron and nitrogen-incorporated graphene thin films were grown on polycrystalline Ni substrates by thermal chemical vapor deposition using separate boron- and nitrogen-containing feedstocks. Boron and nitrogen atoms were incorporated in the film in almost equal amounts and the total content reached ∼28%. The film predominantly consisted of separate graphene and boron nitride domains. Carrier concentration in the graphene domains was estimated to be about 1 × 10−3 e/atom (3.8 × 1012 cm−2) from G band shift in Raman spectra.

► B and N-incorporated graphene were grown on polycrystalline Ni substrates by CVD using separate B- and N-containing feedstocks.
► B and N were incorporated in the film up to a total content of ∼28%.
► The film predominantly consisted of separated graphene and BN domains.
► Carrier concentration in the graphene domains was estimated to be about 1 × 10−3 e/atom (3.8 × 1012 cm−2).