Xe irradiation-induced defects in CuInSe2 by phase resolved photoacoustic spectroscopy

We report a study on the optical properties of 40 keV Xe+ implants with a dose of 5 × 1016 ions/cm2 into p-type conducting CuInSe2 single crystals using the phase resolved method of the photoacoustic spectroscopy (PAS) technique. Photoacoustic spectra have been measured in the photon energy range 0.7 < hν < 1.4 eV prior and after implantation at various phase angles using a high resolution fully computerized spectrometer. Once the spectra separation is carried out, an analysis on the impact of Xe+ on the defect structure of CuInSe2 is presented. The results obtained here are discussed in the light of current reported literature.

► Analysis of Xe+ implanted CuInSe2 by phase resolved photoacoustic spectroscopy.
► Xenon implants damage effects on the near surface of CuInSe2.
► Analysis of the induced defect states following Xe+ implantation into CuInSe2.