Non-ohmic transport behavior in ultra-thin gold films

Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (1010–1011 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I–V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.

► C-AFM study on ultra-thin gold films.
► Connection between ultra-thin film morphology and lateral electrical transport.
► Transition between ohmic and non-ohmic behavior.
► Electrical transition correlation to the film structure continuity.
► Direct and indirect tunneling regimes related to discontinuous structures.