کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530625 | 1511996 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Gas phase considerations for the growth of device quality nanocrystalline silicon at high rate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
In order to increase industrial viability and to find niche markets, high deposition rate and low temperature depositions compared to standard deposition conditions are two recent trends in research areas concerning thin film silicon. In situ diagnostic tools to monitor gas phase conditions are useful in quick optimization processes of deposition parameters without going into time consuming material characterizations. Optical emission spectroscopy is an efficient technique to monitor/predict growth rate and phase of the material (amorphous or nanocrystalline). However, at high growth rate conditions which are generally achieved at high chamber pressures (p), the simple correlation breaks down. We see that at high pressure condition a higher Hα/Si* is needed for the onset of crystallinity than that is found at lower pressure conditions. Additional methods such as estimating the silane depletion from the experiment and the flux ratio of atomic hydrogen to deposited silicon atoms from simulations can be used for fine-tuning the amorphous to nanocrystalline transition regime. On the other hand, intensity of Si* line loses its character as a monitoring tool for deposition rate. Moreover, the plasma changes its character when the pressure is varied, even when the pd product is kept constant. In situ diagnosis of the ion energy distribution function by a retarding field ion energy analyzer has thrown new lights on the role of hydrogen dilution for depositions at low substrate temperature conditions, namely to compensate the loss in ion energy due to lower gas temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 159â160, 15 March 2009, Pages 38-43
Journal: Materials Science and Engineering: B - Volumes 159â160, 15 March 2009, Pages 38-43
نویسندگان
J.K. Rath, A.D. Verkerk, Y. Liu, M. Brinza, W.J. Goedheer, R.E.I. Schropp,