کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530645 | 1511996 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si](/preview/png/1530645.png)
چکیده انگلیسی
Cz-Si samples, initially subjected to thermal treatments under high hydrostatic pressure, were subsequently irradiated by fast neutrons. This paper describes a series of infrared spectroscopy measurements that enabled us to determine the effect of the pre-treatments on the annealing characteristics of the VO defect in Si. We found that the activation energies of the two main annealing reactions: VO + Oi â VO2 and VO + SiI â Oi that the defect participates, are comparatively smaller than those of initially untreated samples, correspondingly. We argue that the pre-treatments reduce the potential barrier for the migration of the VO defect (VO + Oi â VO2) and also reduces the binding energy of the SiI's, bound at large defect clusters (VO + SiI â Oi).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 159â160, 15 March 2009, Pages 122-127
Journal: Materials Science and Engineering: B - Volumes 159â160, 15 March 2009, Pages 122-127
نویسندگان
C.A. Londos, G.D. Antonaras, M.S. Potsidi, A. Misiuk,