کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530650 | 1511996 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures](/preview/png/1530650.png)
Oxygen precipitation in heavily phosphorus-doped (P-doped) Czochralski (CZ) silicon subjected to single-step annealing at high temperatures in the range of 1050–1150 °C has been investigated. It was indicated that in the heavily P-doped CZ silicon there were more grown-in oxygen precipitates, thus promoting the generation of induced defects and accelerating the Ostwald ripening of oxygen precipitates during the high temperature annealing, in comparison with the control lightly P-doped CZ silicon with comparable initial oxygen concentration and thermal history. Moreover, it was found that, during the annealing at 1050 °C, oxygen precipitation in the outer region about 2.5 cm in width was noticeably retarded with respect to that in the inner region across the heavily P-doped CZ silicon wafer. The mechanism for the enhanced formation of grown-in oxygen precipitates and the retardation of oxygen precipitation at high temperature, as mentioned above, has been tentatively explained.
Journal: Materials Science and Engineering: B - Volumes 159–160, 15 March 2009, Pages 145–148