کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530660 | 1511996 | 2009 | 4 صفحه PDF | دانلود رایگان |
Solar cells made of heterojunctions between hydrogenated amorphous silicon (a-Si:H) thin films and crystalline silicon (c-Si) require good passivation of both front and back surface defects of the crystalline silicon wafers and low recombination at the interfaces. A good indicator of the interface quality is given by the effective lifetime that can be deduced from a modulated photoluminescence (MPL) technique by recording the frequency dependence of the photoluminescence phase shift with respect to the time-modulated light excitation. We apply the MPL technique to assess the passivation quality of different kinds of amorphous layers, for both p- and n-type silicon wafers as well as their evolution upon annealing. The MPL effective lifetimes are also compared to those deduced from the photoconductance technique.
Journal: Materials Science and Engineering: B - Volumes 159–160, 15 March 2009, Pages 186–189