کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530771 | 1511998 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition](/preview/png/1530771.png)
چکیده انگلیسی
TiO2 thin films were deposited on ITO (indium-tin-oxide)-buffered glass by pulsed laser deposition. Bipolar resistive switching behaviors of Ag/microcrystalline TiO2/ITO stacked structures were systematically investigated. Dependence of switching voltage and band gap energy on deposition temperature were also analyzed. Results indicate that the reset voltages and band gap energy (Eg) vary from â0.9 V to â6.8 V and 3.26 eV to 3.18 eV respectively, while the TiO2 films were formed from 300 °C to 600 °C. These bipolar switching phenomena have been also discussed based on the Schottky barrier at the Ag/TiO2 interface structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 157, Issues 1â3, 15 February 2009, Pages 36-39
Journal: Materials Science and Engineering: B - Volume 157, Issues 1â3, 15 February 2009, Pages 36-39
نویسندگان
Xun Cao, Xiaomin Li, Weidong Yu, Xinjun Liu, Xiliang He,