Electrical properties of the epitaxial La1−x−ySrxMnO3 films grown by excimer laser-assisted metal organic deposition

An epitaxial La1−x−ySrxMnO3 film was prepared by excimer laser-assisted metal organic deposition (ELAMOD) at 500 °C. To improve the temperature dependence of the resistance (TCR) of the film around 298 K, we investigated the effects of oxygen annealing, metal composition and orientation on the temperature of peak resistance (Tp), temperature of maximum TCR (Tm) and temperature coefficient of resistance (TCR) of the film. In the case of annealing the as-deposited film in oxygen for 24 h, the TCR of the film decreased from 4.0 to 3.1%, whereas the Tm shifted to 280 K. When the oxygen annealed film was irradiated by a KrF laser under the same conditions, TCR of the film increased 4.0% at 272 K. When preparing the epitaxial La0.7Sr0.3MnO3 (x = 0.3) film on an STO substrate by ELAMOD, the Tm of the film shifted to 298 K. However, the TCR of the film was 2.1%. On the other hand, the epitaxial La0.7Sr0.2MnO3 film on the STO substrate by ELAMOD showed a maximum TCR of 4.3% at 298 K.