کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531059 | 1512000 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers](/preview/png/1531059.png)
چکیده انگلیسی
This work presents the selective epitaxial growth (SEG) of Si1−xGex (x = 0.15–0.315) layers with high amount of boron (1 × 1020–1 × 1021 cm−3) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 154–155, 5 December 2008, Pages 106–109
Journal: Materials Science and Engineering: B - Volumes 154–155, 5 December 2008, Pages 106–109
نویسندگان
H.H. Radamson, M. Kolahdouz, R. Ghandi, M. Ostling,