High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

This work presents the selective epitaxial growth (SEG) of Si1−xGex (x = 0.15–0.315) layers with high amount of boron (1 × 1020–1 × 1021 cm−3) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.