کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531085 1512000 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Strain mapping in MOSFETS by high-resolution electron microscopy and electron holography
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Strain mapping in MOSFETS by high-resolution electron microscopy and electron holography
چکیده انگلیسی

We present two methods for mapping strains in MOSFETs at the nanometer scale. Aberration-corrected high-resolution transmission electron microscopy (HRTEM) coupled with geometric phase analysis (GPA) provides sufficient signal-to-noise to accurately determine strain fields across the active regions of devices. Finite element method (FEM) simulations are used to confirm our measurements. The field of view is however limited to about 100 nm2. To overcome this, we have developed a new technique called dark-field holography based on off-axis electron holography and dark-field imaging. This new technique provides us a better strain resolution than HRTEM, a spatial resolution of 4 nm and a field of view of 1 μm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 154–155, 5 December 2008, Pages 221–224
نویسندگان
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