Keywords: سیلیکون تضعیف شده; Electronic structure; Silicon-on-insulator; Strained silicon; Ultrasoft X-ray spectroscopy; Synchrotron radiation; Linearized augmented plane wave method;
مقالات ISI سیلیکون تضعیف شده (ترجمه نشده)
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Keywords: سیلیکون تضعیف شده; Electronic structure; Silicon-on-insulator; Strained silicon; Ultrasoft X-ray spectroscopy; Synchrotron radiation
Keywords: سیلیکون تضعیف شده; Strained silicon; SOI; Implantation; SiGe;
Comprehensive analysis of Subthreshold short channel behavior of a Dual-material gate strained trapezoidal FinFET
Keywords: سیلیکون تضعیف شده; Trapezoidal FinFET; Strained Silicon; Short channel effects; Subthreshold swing; Threshold voltage roll-off;
Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes
Keywords: سیلیکون تضعیف شده; nMOSFET; FDSOI; Strained silicon; sSOI; Reliability; Hot Carrier
2D strain measurement in sub-10 nm SiGe layer with dark-field electron holography
Keywords: سیلیکون تضعیف شده; Electron microscopy; Electron holography; Dark-field electron holography (DFEH); SiGe; Strained silicon
Impact of underlap and mole-fraction on RF performance of strained-Si/Si1−xGex/strained-Si DG MOSFETs
Keywords: سیلیکون تضعیف شده; Underlap DG-nMOSFET; RF performance; Strained silicon; Non quasi static effect
Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
Keywords: سیلیکون تضعیف شده; Gate-Induced-Drain-Leakage; MuGFETs; Proton irradiation; Strained silicon;
Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks
Keywords: سیلیکون تضعیف شده; CMOS; Mobility enhancement; SiGe channel; Strained silicon; Stress; Substrate orientation
Modeling and simulation of the interplay between contact metallization and stress liner technologies for strained silicon
Keywords: سیلیکون تضعیف شده; Stress engineering; Process simulation; Strained silicon; Strained tungsten
Laser photo-reflectance characterization of resonant nonlinear electro-refraction in thin semiconductor films
Keywords: سیلیکون تضعیف شده; Photo-reflectance; Non-linear refraction; Strained silicon
Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100>- and <110> channel orientations
Keywords: سیلیکون تضعیف شده; Nanowire; Strained silicon; Field-effect transistor; Silicon-on-insulator; Mobility
Subband engineering in n-type silicon nanowires using strain and confinement
Keywords: سیلیکون تضعیف شده; Silicon nanowires; Strained silicon; Subband structure; Two-band k · p model; One-dimensional electron gas;
Impact of SEG on uniaxially strained MuGFET performance
Keywords: سیلیکون تضعیف شده; SEG; Strained silicon; Triple gate FET; MuGFET; Low temperature
Moore’s crystal ball: Device physics and technology past the 15 nm generation
Keywords: سیلیکون تضعیف شده; CMOS; ETSOI; FDSOI; FinFET; TriGate; Nanowire; Strained silicon; Ge channels
Strained MOSFETs on ordered SiGe dots
Keywords: سیلیکون تضعیف شده; Strained silicon; DOTFET; Three-dimensional device simulation; Mobility enhancement; Technology CAD;
Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers
Keywords: سیلیکون تضعیف شده; Strained silicon; Thermal oxidation; Silicon-germanium; Oxide semiconductor interface;
Compact modeling of CMOS transistors under variable uniaxial stress
Keywords: سیلیکون تضعیف شده; Compact modeling; Variable mechanical stress; Uniaxial stress; Strained silicon; BSIM3v3 model; Piezoresistivity; Flexible electronics
Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator
Keywords: سیلیکون تضعیف شده; 68.55.Ag; 81.15.âz; 68.37.Lp; Strained silicon; SiGe; Strain relaxation; Raman spectroscopy;
Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
Keywords: سیلیکون تضعیف شده; Strained silicon; MOSFET; E-beam-lithography; Overlay
Tensile strain engineering of Si thin films using porous Si substrates
Keywords: سیلیکون تضعیف شده; Strained silicon; Porous silicon
Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates
Keywords: سیلیکون تضعیف شده; Strained silicon; Relaxation; Dislocations; Stacking faults; Silicon germanium
Enhancing epitaxial SixC1 − x deposition by adding Ge
Keywords: سیلیکون تضعیف شده; Strained silicon; Epitaxy; Ultra-high vacuum chemical vapor deposition; SixC1 − x; Complementary metal oxide semiconductor; X-ray diffraction; Transmission electron microscopy
Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain
Keywords: سیلیکون تضعیف شده; SOI; GIFBE; Electron-valance band tunneling; Strained silicon
Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 2 efficient self-consistent numerical solution of the k · p schrödinger equation
Keywords: سیلیکون تضعیف شده; Two-band k · p model; Self-consistent solution; Numerical integration; Strained silicon; Two-dimensional electron gas; Ultra-thin body transistors
The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs
Keywords: سیلیکون تضعیف شده; Analog MOSFET; Self-heating; Silicon–germanium; Strained silicon; Self-gain
Strain sensitivity of gate leakage in strained-SOI nMOSFETs: A benefit for the performance trade-off and a novel way to extract the strain-induced band offset
Keywords: سیلیکون تضعیف شده; MOSFET; Strained silicon; FD-SOI; Gate leakage; Band offset; Fowler–Nordheim
Transient activation model for antimony in relaxed and strained silicon
Keywords: سیلیکون تضعیف شده; Antimony; Strained silicon; Ultra-shallow junction; Modelling
Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress
Keywords: سیلیکون تضعیف شده; Strained silicon; Uniaxial stress; MOSFETs; Impact ionization; Substrate current
Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack
Keywords: سیلیکون تضعیف شده; MOSFET; Strained silicon; Piezoresistance; Uniaxial stress; Shear stress; Biaxial stress; Fully-depleted silicon-on-insulator; FD-SOI
High temperature antimony ion implantation in strained silicon-on-insulator
Keywords: سیلیکون تضعیف شده; Antimony; Strained silicon; Ion implantation; High temperature implantation
Silicon nanowire FETs with uniaxial tensile strain
Keywords: سیلیکون تضعیف شده; Si Nanowire; Multi-gate devices; Strained silicon; Strain engineering
Advanced SOI CMOS transistor technology for high performance microprocessors
Keywords: سیلیکون تضعیف شده; SOI CMOS; Strained silicon; HKMG devices
Challenges in etch: What's new?
Keywords: سیلیکون تضعیف شده; 45 nm technology; 193 nm resist; Strained silicon; Pattern density
Reduced self-heating by strained silicon substrate engineering
Keywords: سیلیکون تضعیف شده; Strained silicon; Self heating; MOSFET;
Strain mapping in MOSFETS by high-resolution electron microscopy and electron holography
Keywords: سیلیکون تضعیف شده; Strained silicon; Strain metrology; Electron microscopy; Electron holography
Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates
Keywords: سیلیکون تضعیف شده; Strained silicon; Uniaxial strain; Dislocation-free; Porous silicon
Electrical characterization of CMOS transistors subject to externally applied mechanical stress
Keywords: سیلیکون تضعیف شده; 73.40.Qv; CMOS transistors; Strained silicon; Electronic transport;
Effect of the Ge mole fraction on the formation of a conduction path in cylindrical strained-silicon-on-SiGe MOSFETs
Keywords: سیلیکون تضعیف شده; Strained silicon; Surrounding gate MOSFET; Threshold voltage; Two-dimensional simulationStrained silicon; SiGe; MOSFET; Threshold voltage; Mobility; Two-dimensional simulation
Effect of band structure discretization on the performance of full-band Monte Carlo simulation
Keywords: سیلیکون تضعیف شده; Strained silicon; Electron transport; Electronic band structure; Full-band Monte Carlo; k-Space discretization
On the electron mobility enhancement in biaxially strained Si MOSFETs
Keywords: سیلیکون تضعیف شده; Strained silicon; Mobility enhancement; Characterization and Modeling; Temperature dependence; Surface roughness
Uniaxially strained silicon by wafer bonding and layer transfer
Keywords: سیلیکون تضعیف شده; Wafer bonding; Strained silicon; Uniaxial strain; Raman spectroscopy
Experimental evidence and extraction of the electron mass variation in [1 1 0] uniaxially strained MOSFETs
Keywords: سیلیکون تضعیف شده; MOSFET; Strained silicon; Mobility; Extraction technique; Effective mass; Uniaxial stress
Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures
Keywords: سیلیکون تضعیف شده; Strained silicon; Mobility; Boron; Ion implantation
Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy
Keywords: سیلیکون تضعیف شده; Strained silicon; Raman spectroscopy; Strain relaxation; SiGe
Inherent point defects in thermal biaxially tensile strained-(1Â 0Â 0)Si/SiO2 probed by electron spin resonance
Keywords: سیلیکون تضعیف شده; Strained silicon; Interface defects; Electron paramagnetic resonance; Thermal oxidation; Paramagnetic point defects;
Epitaxial engineered solutions for ITRS scaling roadblocks
Keywords: سیلیکون تضعیف شده; Epitaxy; Strained silicon; Scaling; Engineered substrates; Raised source/drain; Thermal management; Mobility enhancement;
Non-selective thin SiGe strain-relaxed buffer layers: Growth and carbon-induced relaxation
Keywords: سیلیکون تضعیف شده; Epitaxy; Strain-relaxed buffers; Strained silicon; Relaxation mechanism;
Growth of strained Si on He ion implanted Si/SiGe heterostructures
Keywords: سیلیکون تضعیف شده; Strained silicon; SiGe relaxation; He ion implantation
A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGe NMOSFETs
Keywords: سیلیکون تضعیف شده; Surface scattering; Monte-Carlo method; Strained silicon; MOSFET;