Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices

► Off-state leakage current for nMuGFETs was degraded by radiation due to the increase of the back gate leakage current. ► The proton irradiation influence on the off-state leakage current is investigated for four different stress conditions. ► For pMuGFETs the radiation has no influence on the gate current and consequently did not show any influence in off-state current. ► nMuGFETs with high stress effectiveness reach unacceptable values of off-state leakage current after radiation.