کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1553610 | 1513226 | 2014 | 13 صفحه PDF | دانلود رایگان |
• Strained-Si for RF application.
• Underlap DG-nMOSFET with strained-Si.
• Analysis of intrinsic RF figure of merits including non-quasi static effects.
In this paper, a systematic RF performance analysis of double-gate strained silicon (DGSS) nMOSFETs is presented. The analysis is focused upon impact of Germanium mole-fraction variation on RF performance of underlap engineered DGSS nMOSFET. The RF performance of the device is analysed as a function of intrinsic RF figure of merits (FOMs) including non-quasi static effects (NQS). The RF FOMs are represented by the intrinsic gate to source/drain capacitance (Cgs and Cgd) and resistance (Rgs and Rgd), the transport delay (τm), the intrinsic inductance (Lsd), the cut-off frequency (fT), and the maximum oscillation frequency (fMAX). The results of the study suggested a significant improvement in the device performance, up to 40% increase in Germanium mole fraction (χ).
Journal: Superlattices and Microstructures - Volume 75, November 2014, Pages 634–646