کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7939030 1513184 2018 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comprehensive analysis of Subthreshold short channel behavior of a Dual-material gate strained trapezoidal FinFET
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Comprehensive analysis of Subthreshold short channel behavior of a Dual-material gate strained trapezoidal FinFET
چکیده انگلیسی
The current research highlights the subthreshold short channel characteristics of a novel structure namely Dual-material gate strained Trapezoidal strained FinFET. Based on the effective channel width and equivalent number of gates (ENG), we have developed a quasi-3-D scaling length model and examined device characteristics like potential and electric field. The response of the device towards the various short channel effects has also been studied in depth. The analytical results obtained have been verified using 3-D numerical device simulation results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 117, May 2018, Pages 527-537
نویسندگان
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