Keywords: اثرات کانال کوتاه; Junctionless transistor; Gate-source/drain underlap; Model; Short channel effects; TCAD;
مقالات ISI اثرات کانال کوتاه (ترجمه نشده)
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Keywords: اثرات کانال کوتاه; Junctionless FET; Double-gate; Gaussian-like doping; Short channel effects; Subthreshold current; Subthreshold swing;
Keywords: اثرات کانال کوتاه; 2D material; NEGF; Junctionless FET; Quantum ballistic simulation; Short channel effects; Debye -screening; Potentiometric biosensor;
Keywords: اثرات کانال کوتاه; SH-GNRFET; BTBT; Halo doping; Ambipolar behavior; Short channel effects
Keywords: اثرات کانال کوتاه; Graphene Nanoribbon Field Effect Transistor (GNRFET); Ambipolarity; Band to Band Tunneling; Drain Induced Barrier Lowering (DIBL); Non Equilibrium Green's Function (NEGF); Short Channel Effects; Uniaxial Tensile Strain;
Keywords: اثرات کانال کوتاه; DG FINFET; Electrostatics; Quantum confinement; Short channel effects
Keywords: اثرات کانال کوتاه; Drain current modeling; Triple gate junctionless; Short channel effects
Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures
Keywords: اثرات کانال کوتاه; Gate-All-Around; SOI MOSFET; Nanowire; Cryogenic temperature; Short channel effects; Analog parameters; Quantum transport; Low frequency noise; Noise spectroscopy;
Comprehensive analysis of Subthreshold short channel behavior of a Dual-material gate strained trapezoidal FinFET
Keywords: اثرات کانال کوتاه; Trapezoidal FinFET; Strained Silicon; Short channel effects; Subthreshold swing; Threshold voltage roll-off;
2D modeling based comprehensive analysis of short channel effects in DMG strained VSTB FET
Keywords: اثرات کانال کوتاه; Short channel effects; VSTB FET; Dual gate material; Strained silicon channel; DIBL; HCE;
A novel graphene nanoribbon FET with an extra peak electric field (EFP-GNRFET) for enhancing the electrical performances
Keywords: اثرات کانال کوتاه; Original and virtual gate; NEGF method; Electric field; Short channel effects; GNRFET;
Superior electrical characteristics of novel nanoscale MOSFET with embedded tunnel diode
Keywords: اثرات کانال کوتاه; Metal Oxide Semiconductor Field Effect Transistor; Silicon On Insulator; Self heating effect; Floating body effect; Short channel effects;
Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime
Keywords: اثرات کانال کوتاه; Leakage current; Sub-surface current; Tunneling; Nano-MOSFET; Modeling; Short channel effects; Sub-threshold region;
DC and microwave characteristics of 20Â nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications
Keywords: اثرات کانال کوتاه; HEMT; Back-barrier; Recessed gate; Cut-off frequency; Short channel effects;
Stopping electric field extension in a modified nanostructure based on SOI technology - A comprehensive numerical study
Keywords: اثرات کانال کوتاه; Si3N4 extra oxide; SOI-MOSFET; Short channel effects; Stopping electric field;
Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs
Keywords: اثرات کانال کوتاه; InGaN back barrier; InAlN/GaN heterostructure; Short channel effects; 2DEG; Heterostructure; MOSHEMT
Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET
Keywords: اثرات کانال کوتاه; Fully-depleted silicon-on-insulator (SOI); Self-heating effect; Leakage current; Short channel effects; Hot-carrier degradation; Electron temperature;
A novel Silicon on Insulator MOSFET with an embedded heat pass path and source side channel doping
Keywords: اثرات کانال کوتاه; SOI MOSFET; Self heating; Short channel effects; Parasitic capacitance; Channel doping
A 2D sub-threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs
Keywords: اثرات کانال کوتاه; Threshold voltage; Subthreshold current; Short channel effects
In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature
Keywords: اثرات کانال کوتاه; SOI FinFET; Strain; Very low temperature; Short channel effects; Analog parameters; Low frequency noise
Impact of quantum effects on the short channel effects of III–V nMOSFETs in weak and strong inversion regimes
Keywords: اثرات کانال کوتاه; Short channel effects; III–V MOSFETs; Quantum effects; Dark space; Generalized DIBL parameter
Quantum mechanical analytical modeling of nanoscale DG FinFET: evaluation of potential, threshold voltage and source/drain resistance
Keywords: اثرات کانال کوتاه; QM modeling; Simulation; Nanoscale device; Ultra thin body; Short channel effects
Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
Keywords: اثرات کانال کوتاه; Junctionless; Double gate MOSFETs; Nanowire; Subthreshold; DIBL; Short channel effects
20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain
Keywords: اثرات کانال کوتاه; Schottky-MOSFET; High-k; Scaling; NiSi; Epitaxial NiSi2; Short channel effects; Silicide source/drain; Implantation into silicide; Dopant segregation
Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism
Keywords: اثرات کانال کوتاه; Silicon on insulator (SOI); Leakage current; Short channel effects; DIBL; Current mechanism; 2-D device simulation
Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics
Keywords: اثرات کانال کوتاه; Recessed p-buffer; SiC MESFET; Gate–source capacitance; DC trans-conductance; Short channel effects; Cut-off frequency; Breakdown voltage
Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs
Keywords: اثرات کانال کوتاه; DM-DG MOSFET; TM-DG MOSFET; Hot carrier effects; Short channel effects; Work function
LDC–CNTFET: A carbon nanotube field effect transistor with linear doping profile channel
Keywords: اثرات کانال کوتاه; Carbon nanotube field effect transistor (CNTFET); Nonequilibrium Green’s function (NEGF); Linear doping profile; Short channel effects; Channel impurity; Channel length
Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation
Keywords: اثرات کانال کوتاه; Silicon germanium-on-insulator (SGOI); Hot-carrier; Reliability; Electric field; Leakage current; Short channel effects; 2D device simulation
Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below
Keywords: اثرات کانال کوتاه; SOI; Metal gate; Short channel effects; Fully-depleted; BOX; DIBL; Subthreshold slope
Gate-all-around technology: Taking advantage of ballistic transport?
Keywords: اثرات کانال کوتاه; Gate-all-around; Ballisticity; Limiting velocity; Parasitic capacitance; Effective current; DIBL; Short channel effects; Circuits
Justifying threshold voltage definition for undoped body transistors through “crossover point” concept
Keywords: اثرات کانال کوتاه; Double gate (DG) MOSFET; Short channel effects; Threshold voltage
High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate
Keywords: اثرات کانال کوتاه; Germanium; Germanium-on-insulator; GeOI; MOSFET; High-k; Short channel effects; Hole mobility
Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs
Keywords: اثرات کانال کوتاه; Silicon-on-insulator; Recessed source/drain SOI; Two-dimensional (2D) Poisson’s equation; Potential distribution; Short channel effects; Threshold voltage
Continuous model for independent double gate MOSFET
Keywords: اثرات کانال کوتاه; Symmetrical; Asymmetrical and independent double gate MOSFET; Compact model; Short channel effects; Mobility model; Charge model
Compact model for short channel symmetric doped double-gate MOSFETs
Keywords: اثرات کانال کوتاه; Compact modeling; Doped double-gate MOSFET; Double-gate current modeling; Short channel effects
An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET
Keywords: اثرات کانال کوتاه; 85.30.Tv; 85.30.−z; 73.40.Qv; 47.27.E−Surrounding gate MOSFET; Graded channel profile; Asymmetric gate stack; Short channel effects; Hot carrier effects
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation
Keywords: اثرات کانال کوتاه; AlGaN/GaN HEMT; Small geometry; Short channel effects; Three-dimensional (3-D) modeling; Threshold voltage
A novel 50 nm vertical MOSFET with a dielectric pocket
Keywords: اثرات کانال کوتاه; Vertical MOSFET; Dielectric pocket; Shallow junctions; Short channel effects
A comprehensive study of short channel effects in organic field-effect transistors
Keywords: اثرات کانال کوتاه; 85.30.Tv; 73.61.−rIntegrated organic electronics; Thin-film transistors; Short channel effects; Channel-length modulation; Threshold-voltage roll-off; Current punch-through
Scaling effects in dual-bit split-gate nitride memory devices
Keywords: اثرات کانال کوتاه; NVM; Nitride storage; Split-gate; Short channel effects; Hot Holes erase;
Short channel effects in polysilicon thin film transistors
Keywords: اثرات کانال کوتاه; Polysilicon TFTs; Short channel effects; Kink effect; Parasitic bipolar transistor;
Temperature dependence on electrical characteristics of short geometry poly-crystalline silicon thin film transistor
Keywords: اثرات کانال کوتاه; Poly-crystalline silicon; TFT; Analytical modeling; Short channel effects; Inverse narrow width effect; Threshold voltage; Drain current; Transconductance; Cut-off frequency; Transit time; Fringing capacitance; Temperature;