Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

In this paper, we propose an approximate solution to solve the two dimensional potential distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating in the subthreshold regime. Basically, we solved the 2D-Poisson equation along the channel, while assuming a parabolic potential across the silicon thickness, which in turn leads to some explicit relationships of the subthreshold current, subthreshold slope (SS) and drain induced barrier lowering (DIBL). This approach has been assessed with Technology Computer Aided Design (TCAD) simulations, confirming that this represents an interesting solution for further implementation in generic JL DG MOSFETs compact models.

► Junctionless is one of the most promising alternative architecture for CMOS.
► Some works have been done via numerical simulations.
► An analytical model of the potential distribution is investigated in junctionless.
► This paper is an important stage to include short channel effects in junctionless.
► The subthreshold current and slope and also DIBL have been extracted analytically.