کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753342 895515 2009 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs
چکیده انگلیسی

Front-gate and back-gate potential distributions and threshold voltage of recessed source/drain (ReS/D) ultrathin body (UTB) silicon-on-insulator (SOI) MOSFETs are modeled. The analytical expressions of the front-gate and the back-gate potential distributions are derived by assuming a parabolic potential variation perpendicular to channel and by solving 2D Poisson’s equation. Based on strong inversion criterion applied to the surface potential minimum value, threshold voltage model of the short channel ReS/D UTB SOI MOSFETs is derived. The model is verified by comparison with 2D numerical device simulator over a wide range of different material and geometrical parameters and very good agreement is obtained.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 5, May 2009, Pages 540–547
نویسندگان
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