Keywords: نوسان زیر باریک; Junctionless FET; Double-gate; Gaussian-like doping; Short channel effects; Subthreshold current; Subthreshold swing;
مقالات ISI نوسان زیر باریک (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: نوسان زیر باریک; Amorphous oxide semiconductor; Thin film transistor; Hafnium-tin-zinc oxide (HTZO); NBTI; Subthreshold swing;
Keywords: نوسان زیر باریک; Partially depleted silicon-on-insulator device; Ferroelectric insulator; Negative capacitance; Subthreshold logic; Subthreshold swing
Structure properties and electrical mechanisms of Si(001)/SiO2 interface with varying Si layer thickness in nano-scale transistor
Keywords: نوسان زیر باریک; Si(001)/SiO2; Si layer thickness; Stress/strain; Surface potential; Threshold voltage; Subthreshold swing;
A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's
Keywords: نوسان زیر باریک; SOI-MESFET; Analytical modeling; Boundary conditions; Superposition method; Orthogonality property; Channel potential; Threshold voltage; Subthreshold swing;
Comprehensive analysis of Subthreshold short channel behavior of a Dual-material gate strained trapezoidal FinFET
Keywords: نوسان زیر باریک; Trapezoidal FinFET; Strained Silicon; Short channel effects; Subthreshold swing; Threshold voltage roll-off;
Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics
Keywords: نوسان زیر باریک; TFET; Subthreshold swing; Hafnium aluminum oxide; Atomic layer deposition;
Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure
Keywords: نوسان زیر باریک; Charge plasma; Tunnel FET(TFETs); Ferroelectric insulator; Doping-less; Heterojunction; Subthreshold swing;
Exploring the short channel characteristics and performance analysis of DMDG SON MOSFET
Keywords: نوسان زیر باریک; Short channel effects (SCEs); Silicon-on-insulator (SOI)/silicon-on-nothing (SON) MOSFET; Dual-material double gate (DMDG); Drain-induced barrier lowering (DIBL); Subthreshold swing; Hot Carrier Effect (HCE);
Improvement of electrical performance in junctionless nanowire TFET using hetero-gate-dielectric
Keywords: نوسان زیر باریک; Junctionless nanowire tunnel field effect transistors (JN-TFETs); High-k dielectric material; Hetero-gate dielectric; On-state current; Subthreshold swing; 2D TCAD simulation;
Dual delta tunnel FET: An energy efficient switch with improved current switching ratio and steeper subthreshold slope
Keywords: نوسان زیر باریک; Delta doping; Current switching ratio; Subthreshold swing; TCAD;
A new design approach for enhancement of DC/RF performance with improved ambipolar conduction of dopingless TFET
Keywords: نوسان زیر باریک; Ambipolarity; Band to band tunneling; Gate underlapping; Metal angle; Subthreshold swing;
Analytical modeling of subthreshold characteristics of ultra-thin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects
Keywords: نوسان زیر باریک; DGAA MOSFETs; Subthreshold current; Quantum confinement effects; SCEs; Subthreshold swing;
A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer
Keywords: نوسان زیر باریک; SOI; FinFET; Threshold voltage; Drive current; Off currents; Subthreshold swing; DIBL; Transistor gate delay; TCAD simulation; Fully silicidation;
Electrostatic performance improvement of dual material cylindrical gate MOSFET using work-function modulation technique
Keywords: نوسان زیر باریک; DMCG; Work-function modulated gate; Subthreshold swing; Drain current;
Subthreshold swing minimization of cylindrical tunnel FET using binary metal alloy gate
Keywords: نوسان زیر باریک; Binary alloy metal gate; Drain current; Band-to-band tunneling; Subthreshold swing;
Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials
Keywords: نوسان زیر باریک; Nanowire; Double gate; Compact modeling; Subthreshold swing; Density-Gradient; III-V;
Heterojunction fully depleted SOI-TFET with oxide/source overlap
Keywords: نوسان زیر باریک; Tunnel FET; Buried oxide (BOX); Band-to-band tunneling; Subthreshold swing; Silicon on Insulator (SOI);
Investigation of performance enhancement in InAs/InGaAs heterojunction-enhanced N-channel tunneling field-effect transistor
Keywords: نوسان زیر باریک; Tunneling FET; Band to band tunneling (BTBT); Subthreshold swing;
A low subthreshold swing tunneling field effect transistor for next generation low power CMOS applications
Keywords: نوسان زیر باریک; Negative capacitance; TFET; Subthreshold swing; SOI TFET;
Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors
Keywords: نوسان زیر باریک; Subthreshold swing; Polarization Coulomb field scattering; AlGaN/AlN/GaN HFETs;
Performance optimization for the sub-22 nm fully depleted SOI nanowire transistors
Keywords: نوسان زیر باریک; Design window; Subthreshold swing; Intrinsic delay; Gate capacitance
InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V
Keywords: نوسان زیر باریک; Heterojunction; Tunneling field-effect transistor; Subthreshold swing; Current ratio; Low operating power; High speed
Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement
Keywords: نوسان زیر باریک; Amorphous indium–gallium–zinc oxide; Subthreshold swing; Thin film transistors
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
Keywords: نوسان زیر باریک; Tunnel FET; Strained Si; Subthreshold swing; SiGe;
Study of the subthreshold swing of a pMOSFET as a dosimetric parameter
Keywords: نوسان زیر باریک; Dosimeter; MOSFET; Subthreshold swing; Threshold voltage
The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors
Keywords: نوسان زیر باریک; CNTFET; Overlap; Abrupt doping profile; Graded doping profile; Subthreshold swing; PDP
An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs
Keywords: نوسان زیر باریک; Metal-Oxide-Semiconductor Field-Effect Transistor; Double-gate; Subthreshold swing
Highly scaled (Lg â¼Â 56 nm) gate-last Si tunnel field-effect transistors with ION > 100 μA/μm
Keywords: نوسان زیر باریک; Band-to-band tunneling; Gated p-i-n diode; High-k dielectric; Kane's model; Subthreshold swing; Tunnel field-effect transistor;
Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms
Keywords: نوسان زیر باریک; Band-to-band tunneling; Barrier tunneling; Schottky junction; Subthreshold swing; Tunnel field-effect transistor (FET); Tunneling dielectric;
Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
Keywords: نوسان زیر باریک; Tunnel FET; Band-to-band tunneling; Local lateral uniaxial tensile strain; Asymmetric strain profile; Local strain engineering; Local band-gap modulation; Subthreshold swing; Scaling; Multi-gate; Si nanowires
Low-temperature electrical characterization of fully depleted eXtra-strained SOI n-MOSFETs with TiN/HfO2 gate stack for the 32-nm technology node
Keywords: نوسان زیر باریک; FD-SOI; Low-field mobility; Low-temperature; NCE; n-MOSFET; SCE; Strain; Subthreshold swing; TiN/HfO2 gate stack; Threshold voltage;
Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs
Keywords: نوسان زیر باریک; SOI-MESFET; Threshold voltage; Subthreshold current; Subthreshold swing; Short-channel effect
Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping
Keywords: نوسان زیر باریک; Carbon nanotube; Field-effect transistor; Halo doping; Hot-carrier effect; Leakage current; Short-channel effects; Subthreshold swing
A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs
Keywords: نوسان زیر باریک; Artificial neural network; DG MOSFET; GAA MOSFET; Subthreshold swing; Scaling capability; Graphical abacus;
A new definition of threshold voltage in Tunnel FETs
Keywords: نوسان زیر باریک; Band-to-band tunneling; Double gate; Gated p-i-n diode; High-k dielectric; Scaling; Subthreshold swing; Threshold voltage; Tunnel field effect transistor
Drive current boosting of n-type tunnel FET with strained SiGe layer at source
Keywords: نوسان زیر باریک; Band-to-band tunneling; Subthreshold swing; Gated p–i–n diode; Tunnel field effect transistor (TFET); Device simulation
Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
Keywords: نوسان زیر باریک; Tunneling FET; Band-to-band tunneling; Subthreshold swing; One-dimensional device
Thin film fully-depleted SOI four-gate transistors
Keywords: نوسان زیر باریک; Four-gate transistor; Fully-depleted SOI; Coupling effects; Threshold voltage; Subthreshold swing; Transconductance
Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
Keywords: نوسان زیر باریک; Band-to-band tunneling; Double gate; Gated p–i–n diode; High-K dielectric; Scaling; Subthreshold swing; Tunnel field effect transistor
Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs
Keywords: نوسان زیر باریک; Nanoscale semiconductor devices; Double Gate MOSFET; Gate All Around MOSFETs; Scaling rules; Device modeling; Threshold voltage; DIBL; Subthreshold swing;
Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET
Keywords: نوسان زیر باریک; Gate all around; MOSFET; Device modeling; Downscaling; Threshold voltage; Subthreshold swing; Surrounding-gate MOSFET
Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect
Keywords: نوسان زیر باریک; Complex band structure; Discretized energy levels; Tunneling; Subthreshold swing;
A scaling theory for fully-depleted, surrounding-gate MOSFET's: including effective conducting path effect
Keywords: نوسان زیر باریک; SG MOSFET's; Effective conducting path effect; Scaling factor; Subthreshold swing; Natural length;