Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

► TFETs with a strained Si channel and SiGe source show comparably large on-currents. ► The subthreshold slope amounts to 80 mV/dec at 300 K for a drain current range of 3 orders of magnitude. ► A biased back-gate improves the performance of the TFET. ► The low temperature measurements demonstrate a band to band tunneling transport mechanism.