کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749723 894845 2006 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET
چکیده انگلیسی

Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain–source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 5, May 2006, Pages 805–812
نویسندگان
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