A scaling theory for fully-depleted, surrounding-gate MOSFET's: including effective conducting path effect

A scaling theory for fully-depleted surrounding-gate (SG) MOSFET's is derived, which gives a basic idea how the effective conducting path affects the scaling theory. By investigating the subthreshold conducting phenomenon of SG MOSFET's, the effective conducting path effect (ECPE) is employed to obtain the natural length λ4 which is relevant to the scaling equation. With various substrate concentrations, the minimum channel potential Φdeff,min induced by effective conducting path shows the novel scaling factor α4. Compared to conventional scaling rule, our model accounts for doping effect and hence provides a unified scaling rule for fully-depleted SG SOI MOSFET's.