کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
736304 | 1461913 | 2012 | 6 صفحه PDF | دانلود رایگان |
A study of the degradation of the subthreshold swing in a general-purpose pMOSFET is carried out to evaluate its use as a dosimetric parameter. Its reliability in terms of sensitivity, linearity, and reproducibility is experimentally tested and compared with the threshold voltage shift under gamma rays from a 60Co source up to 56 Gy, typical in radiotherapy treatments. The dependence of the subthreshold swing as a function of temperature is characterized and modelled as a mean for thermal compensation when used for dose measurement. Very promising results have been obtained for the subthreshold swing as a complementary dosimetric parameter to the threshold voltage for enhancing the confidence of dose verification systems based on MOSFETs.
► pMOS Subthreshold swing analysed as dosimetric parameter.
► Sensitivity, linearity and reproducibility of the response to the radiation.
► Subthreshold swing response comparable to threshold voltage.
► Enhanced reliability for the dose verification of radiotherapy treatments.
Journal: Sensors and Actuators A: Physical - Volume 187, November 2012, Pages 16–21