کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411190 | 894553 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect](/preview/png/10411190.png)
چکیده انگلیسی
We show calculations and analysis of ID-VG curves for carbon nanotube field effect transistors (CNTFETs). For 10Â nm CNTFETs, it appears that there is a region where discretized energy levels in the channel have an effect on the ID-VG curve beyond the region where the complex band structure effect is important. This is because energy levels are pulled up from the valence band. We can still have this effect for longer channel CNTFETs, but because the spacing between energy levels is decreased, the energy discretization effect becomes less significant, and it appears as a region with small current oscillation. Also, because the tunneling through band gap states becomes unimportant and the complex band structure effect may even disappear, we separate the ID-VG curve into three parts: ON, OFF, and ON_II region for longer channel CNTFETs. The switching behavior from OFF to ON_II region may suggest interesting applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 5, May 2005, Pages 860-864
Journal: Solid-State Electronics - Volume 49, Issue 5, May 2005, Pages 860-864
نویسندگان
T.-S. Xia, L.F. Register, S.K. Banerjee,