Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

► We report a simulation study on a device exploiting combined band-to-band and barrier tunneling mechanisms. ► This device overcomes the low current drive of conventional Tunnel FETs and has a sub-60 mV/decade subthreshold slope. ► The new switch is a gated m-i-n+ structure which has an ultra-thin dielectric between metal source and silicon channel. ► We evaluate the impact of the tunneling layer thickness on performances and compare single and double gate architectures. ► We assess the impact of device gate length scaling: subthreshold slope and ON current improve at smaller gate lengths.