InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V

An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (Ion/Ioff) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (Ion) of 421 μA/μm, Ion/Ioff of 1.2 × 1012 by design optimization in doping type of In0.53Ga0.47As channel at low gate (VGS) and drain voltages (VDS) of 0.5 V. Comparable performances are maintained at VDS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device.