کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543571 | 871671 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An analytical model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Two-dimensional Poisson equation is solved analytically using series method and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulation results, both of them turn out to agree very well. The results show the variation of channel potential and subthreshold swing with channel length, gate bias, and oxide thickness, which will provide some guidance for the integrated circuit designs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 42, Issue 3, March 2011, Pages 515–519
Journal: Microelectronics Journal - Volume 42, Issue 3, March 2011, Pages 515–519
نویسندگان
Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, Tingao Tang,