کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7151240 | 1462265 | 2011 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strained MOSFETs on ordered SiGe dots
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strained MOSFETs on ordered SiGe dots Strained MOSFETs on ordered SiGe dots](/preview/png/7151240.png)
چکیده انگلیسی
The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain on the upper surface of a 30Â nm thick Si layer is in the range of 0.7%, as supported by finite element calculations. The Ge content in the SiGe island is 30% on average, showing an increase towards the top of the island. Based on the extracted structure information, three-dimensional strain profiles are calculated and device simulations are performed. Up to 15% enhancement of the NMOS saturation current is predicted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 81-87
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 81-87
نویسندگان
Johann Cervenka, Hans Kosina, Siegfried Selberherr, Jianjun Zhang, Nina Hrauda, Julian Stangl, Guenther Bauer, Guglielmo Vastola, Anna Marzegalli, Francesco Montalenti, Leo Miglio,