Keywords: افزایش تحرک; Terrain mobility; Agile tire dynamics; Agility; Mobility enhancement; Tire slippage; Tire longitudinal relaxation length; Tire relaxation time constant
مقالات ISI افزایش تحرک (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: افزایش تحرک; Thin silicon films; Spin relaxation; k·pk·p model; Shear strain; Electron–phonon interaction; Mobility enhancement
Keywords: افزایش تحرک; Printed organic thin film transistors (OTFTs); Directional crystallization; Scanned thermal annealing; Thermal gradient; Mobility enhancement
Keywords: افزایش تحرک; X-ray reflectivity; Buried interface morphology; Organic thin film transistor; Grazing incidence X-ray diffraction; Atomic force microscopy; Mobility enhancement;
Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment
Keywords: افزایش تحرک; MoS2; Synergy; UV/ozone plasma treatment; Mobility enhancement; Field-effect transistors;
Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack
Keywords: افزایش تحرک; Ge; MOSFET; Gate stack; Mobility enhancement; Defect termination;
Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain
Keywords: افزایش تحرک; Strain effect; Two-dimensional materials; MoS2 monolayer; Mobility enhancement; Phase transition;
Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks
Keywords: افزایش تحرک; CMOS; Mobility enhancement; SiGe channel; Strained silicon; Stress; Substrate orientation
Capacitorless single transistor dynamic random-access memory devices fabricated on silicon-germanium-on-insulator substrates
Keywords: افزایش تحرک; Single transistor dynamic random-access memory; Silicon-germanium-on-insulator substrate; Strain effect; Mobility enhancement;
Strained MOSFETs on ordered SiGe dots
Keywords: افزایش تحرک; Strained silicon; DOTFET; Three-dimensional device simulation; Mobility enhancement; Technology CAD;
Integration of MOSFETs with SiGe dots as stressor material
Keywords: افزایش تحرک; Silicon–germanium dots; Stranski–Krastanow mode; Stressor materials; MOSFET; CMOS; Excimer-laser annealing; Metal gates; Mobility enhancement
On the electron mobility enhancement in biaxially strained Si MOSFETs
Keywords: افزایش تحرک; Strained silicon; Mobility enhancement; Characterization and Modeling; Temperature dependence; Surface roughness
Physics of process induced uniaxially strained Si
Keywords: افزایش تحرک; Strained-Si; Mobility enhancement; Biaxial stress; Uniaxial stress
Epitaxial engineered solutions for ITRS scaling roadblocks
Keywords: افزایش تحرک; Epitaxy; Strained silicon; Scaling; Engineered substrates; Raised source/drain; Thermal management; Mobility enhancement;