Capacitorless single transistor dynamic random-access memory devices fabricated on silicon-germanium-on-insulator substrates

► Single transistor dynamic random-access memory (1T-DRAM) was demonstrated. ► Silicon-on-insulator (SOI) and SiGe-on-insulator (SGOI) 1T-DRAM were investigated. ► SGOI 1T-DRAM showed superior electric performance to SOI 1T-DRAM. ► High-temperature annealing improved the performance of SGOI 1T-DRAM.