کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5450307 | 1512862 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment](/preview/png/5450307.png)
چکیده انگلیسی
Mobility engineering through physical or chemical process is a fruitful approach for the atomically-layered two-dimensional electronic applications. Unfortunately, the usual process with either illumination or oxygen treatment would greatly deteriorate the mobility in two-dimensional MoS2 field-effect transistor (FET). Here, in this work, we report that the mobility can be abnormally enhanced to an order of magnitude by the synergy of ultraviolet illumination (UV) and ozone plasma treatment in multilayer MoS2 FET. This abnormal mobility enhancement is attributed to the trap passivation due to the photo-generated excess carriers during UV/ozone plasma treatment. An energy band model based on Schottky barrier modulation is proposed to understand the underlying mechanism. Raman spectra results indicate that the oxygen ions are incorporated into the surface of MoS2 (some of them are in the form of ultra-thin Mo-oxide) and can further confirm this proposed mechanism. Our results can thus provide a simple approach for mobility engineering in MoS2-based FET and can be easily expanded to other 2D electronic devices, which represents a significant step toward applications of 2D layered materials in advanced cost-effective electronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 87, March 2017, Pages 150-154
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 87, March 2017, Pages 150-154
نویسندگان
Junjie Guo, Bingchu Yang, Zhouming Zheng, Jie Jiang,