کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531361 | 1512005 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Memory effects in optically active CdSe nanocrystal doped MOS structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Memory effects in optically active CdSe nanocrystal doped MOS structures Memory effects in optically active CdSe nanocrystal doped MOS structures](/preview/png/1531361.png)
چکیده انگلیسی
We present a first study of the synthesis of CdSe nanocrystals embedded in 50 nm thick thermally grown SiO2 on p-type silicon by sequential ion implantation of Cd (30 keV) and Se (26 keV) followed by a rapid thermal annealing step. A metal-oxide-semiconductor (MOS) capacitor structure was fabricated by evaporation of an optically transparent thin Au gate electrode on top of the nanocluster doped SiO2 layer. The observed band edge emission of CdSe is fully intensity tuneable by applying a high electric field over the MOS structure. Strong hysteretic electric field enhancement and quenching of the photoluminescence (PL) was observed when sweeping the electric field strength between ±1 MV/cm. Further an electro optical memory effect was observed in this device and investigated upon its long time stability. Possible mechanisms for this behavior are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 147, Issues 2â3, 15 February 2008, Pages 249-253
Journal: Materials Science and Engineering: B - Volume 147, Issues 2â3, 15 February 2008, Pages 249-253
نویسندگان
A.W. Achtstein, H. Karl, S. Zhenhua, B. Stritzker,