کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531433 1512014 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Anatase TiO2 films with 2.2 eV band gap prepared by micro-arc oxidation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Anatase TiO2 films with 2.2 eV band gap prepared by micro-arc oxidation
چکیده انگلیسی

Anatase TiO2 films were prepared by micro-arc oxidation of TiN films in a Na3PO4 electrolytic solution, while TiN films were obtained by ion beam assisted deposition on Ti substrates. The crystal structure, surface morphology and optical property of the films were investigated by X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF), scanning electron microscopy (SEM) and UV–vis spectroscopy, respectively. The photocatalytic activity of the films was evaluated by the decomposition of methylene blue. Mechanisms for micro-arc oxidation and band gap narrowing of N-doped TiO2 were discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 139, Issues 2–3, 15 May 2007, Pages 216–220
نویسندگان
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