کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531433 | 1512014 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Anatase TiO2 films with 2.2 eV band gap prepared by micro-arc oxidation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Anatase TiO2 films with 2.2 eV band gap prepared by micro-arc oxidation Anatase TiO2 films with 2.2 eV band gap prepared by micro-arc oxidation](/preview/png/1531433.png)
چکیده انگلیسی
Anatase TiO2 films were prepared by micro-arc oxidation of TiN films in a Na3PO4 electrolytic solution, while TiN films were obtained by ion beam assisted deposition on Ti substrates. The crystal structure, surface morphology and optical property of the films were investigated by X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF), scanning electron microscopy (SEM) and UV–vis spectroscopy, respectively. The photocatalytic activity of the films was evaluated by the decomposition of methylene blue. Mechanisms for micro-arc oxidation and band gap narrowing of N-doped TiO2 were discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 139, Issues 2–3, 15 May 2007, Pages 216–220
Journal: Materials Science and Engineering: B - Volume 139, Issues 2–3, 15 May 2007, Pages 216–220
نویسندگان
L. Wan, J.F. Li, J.Y. Feng, W. Sun, Z.Q. Mao,