کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531456 995835 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Studies on undoped SnO2 thin film deposited by chemical reactive evaporation method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Studies on undoped SnO2 thin film deposited by chemical reactive evaporation method
چکیده انگلیسی

Transparent conducting undoped tin oxide thin film were prepared by chemical reactive evaporation method at various substrate temperature and post deposition heating for 30 min. Structural, electrical, optical and mechanical properties were studied. The film showed direct band gap in the range of 3.12–3.28 eV and the refractive index from 1.785 to 1.921. The minimum sheet resistance of ∼243 Ω was obtained at 450 °C. All the film showed high adhesion with highest adhesion of the film deposited at 450 °C. Post deposition heating increases the adhesion. The post deposition heated films showed decrease in transmittance and increase in band gap, refractive index and sheet resistance. The chemical reactive evaporation method is a very cost effective method for obtaining good quality undoped tin oxide thin films of lower resistance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 139, Issue 1, 25 April 2007, Pages 69–73
نویسندگان
, , , ,