کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531569 | 1512013 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si nanocluster growth using a digital gas-feeding method in the LPCVD system and its charge storage effect
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Si nanocluster growth using a digital gas-feeding method in the LPCVD system and its charge storage effect Si nanocluster growth using a digital gas-feeding method in the LPCVD system and its charge storage effect](/preview/png/1531569.png)
چکیده انگلیسی
The density and size of Si nanoclusters were controlled by using a newly suggested digital gas-feeding method with Si2H6 source gas in a low pressure chemical vapor deposition system. The density of the Si nanoclusters increased and the size slightly changed based on the frequency of gas pulse feeding in the digital process. A new process was used in the fabrication of the Si nanocluster floating gate memory structures, which allowed the maximum program window of 6 V to be achieved. It was also found that the program window could be easily controlled through the frequency of gas pulse feeding in the Si nanocluster formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 140, Issues 1–2, 25 May 2007, Pages 103–108
Journal: Materials Science and Engineering: B - Volume 140, Issues 1–2, 25 May 2007, Pages 103–108
نویسندگان
Chan Park, Kyoungmin Kim, Eunkyeom Kim, Junghyun Sok, Kyoungwan Park, Moonsup Han,