کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531608 | 995840 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electrical characterization of tantalum nitride thin film resistors deposited on AlN substrates for π-type attenuator applications
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Tantalum nitride thin films were deposited on AlN substrates at room temperature with an nitrogen/argon flow ratio (N2/(N2 + Ar)) of 3% by dc-magnetron sputtering technique, and then were annealed at 525 °C in 6.7 × 10−4 Pa. The microstructural and electrical properties of the films were investigated as a function of film thickness. The crystallinity of the films decreased with decreasing film thickness and the sheet resistance of 50 nm-thick tantalum nitride films is approximately 80 Ω/□ suitable for 10 dB application in π-type attenuators. The TCR values increase positively with increasing the thickness and 50 nm thick films exhibit a near-zero TCR value of approximately −6 ppm/K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 135, Issue 2, 25 November 2006, Pages 162–165
Journal: Materials Science and Engineering: B - Volume 135, Issue 2, 25 November 2006, Pages 162–165
نویسندگان
Nguyen Duy Cuong, Dong-Jin Kim, Byoung-Don Kang, Soon-Gil Yoon,