Improvement in fatigue property for a PZT ferroelectric film device with SRO electrode film prepared by chemical solution deposition

PZT films with (1 0 0) and (1 1 0) orientation were prepared by spin coating using the chemical solution deposition (CSD) method on an SRO/Si or a Pt/Ti/SiO2/Si substrate. The remnant polarization and the saturation polarization of the PZT/SRO/Si film were 21 and 35 μC/cm2, and those of the PZT/Pt/Ti/SiO2/Si film were 20 and 31 μC/cm2. The remnant polarization of the PZT/SRO/Si film maintained more than 108 switching cycles, and the fatigue property was observed for the PZT film fabricated on the Pt/Ti/SiO2/Si electrode.