کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531663 995843 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High-resolution electron holography for the study of composition and strain in thin film semiconductors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
High-resolution electron holography for the study of composition and strain in thin film semiconductors
چکیده انگلیسی

A method for simultaneous measurement of strain and composition in exactly the same specimen area is proposed using high-resolution electron holography. Results are shown for a strained semiconducting thin films consisting in a Si0.7Ge0.3Si0.7Ge0.3 layer epitaxially grown on a silicon substrate. Experiments were carried out using an aberration-corrected transmission electron microscope fitted with a field emission gun and electron biprism. We demonstrate the efficiency of the technique for providing accurate information on local chemical composition to 5% and strain to 0.1% at a spatial resolution of 2 nm. The accuracy of the results is discussed as are surface relaxation effects.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 135, Issue 3, 15 December 2006, Pages 188–191
نویسندگان
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