کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531802 | 1512017 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of low concentrations of N and C in CZ-Si by precise FT-IR spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Determination of low concentrations of N and C in CZ-Si by precise FT-IR spectroscopy Determination of low concentrations of N and C in CZ-Si by precise FT-IR spectroscopy](/preview/png/1531802.png)
چکیده انگلیسی
This report contains results of the implementation of the modified method of FT-IR measurements, which allows one to improve the sensitivity for more than one order of magnitude. The new method is based mainly on (1) the modified FT-IR system with enhanced photometric accuracy achieved by a suppression of the influence of the instabilities, and (2) using Brewster geometry to suppress the interference effects. The method contains built-in checking of the achieved accuracy of the recorded spectrum. The examples of the determination of [N] and [C] on the 1014Â cmâ3-level in 2Â mm thick samples as well as in industrial wafers are presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 134, Issues 2â3, 15 October 2006, Pages 207-212
Journal: Materials Science and Engineering: B - Volume 134, Issues 2â3, 15 October 2006, Pages 207-212
نویسندگان
V.D. Akhmetov, H. Richter, N. Inoue,