کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531807 | 1512017 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct observation of vacancy in silicon using sub-Kelvin ultrasonic measurements
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We carried out sub-Kelvin ultrasonic measurements for observation of vacancies in crystalline silicon. The longitudinal elastic constants of non-doped and B-doped floating zone (FZ) silicon crystals in commercial base revealed low-temperature elastic softening below 20Â K. The applied magnetic fields turns the softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16Â T at base temperature 20Â mK make no effect on the softening of the non-doped FZ silicon. This result means that the vacancy accompanying the non-magnetic charge state V0 in the non-doped silicon and the magnetic V+ in the B-doped silicon is responsible for the low-temperature softening through the Jahn-Teller effect. The direct observation of the vacancy using the sub-Kelvin ultrasonic measurements advances point defects controlling in silicon wafers and semiconductor devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 134, Issues 2â3, 15 October 2006, Pages 233-239
Journal: Materials Science and Engineering: B - Volume 134, Issues 2â3, 15 October 2006, Pages 233-239
نویسندگان
Terutaka Goto, Hiroshi Yamada-Kaneta, Yasuhiro Saito, Yuichi Nemoto, Koji Sato, Koichi Kakimoto, Shintaro Nakamura,