کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531858 | 1512018 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Microstructures and dielectric properties of PZT thick films prepared by aerosol plasma deposition with microwave annealing Microstructures and dielectric properties of PZT thick films prepared by aerosol plasma deposition with microwave annealing](/preview/png/1531858.png)
Lead zirconate titanate (PZT) thick films have been successfully grown on Pt/Ti-coated (1 0 0) Si substrates by a novel aerosol plasma deposition (APD) method at room temperature. The dielectric constant (K) and loss tangent (tan δ) of the as-deposited film measured at 100 kHz are 223 and 0.034, respectively. The dielectric properties of the film are improved considerably by subsequent microwave annealing: K = 745 and tan δ = 0.024 are achieved for films which are microwave-annealed at 600 W for 3 min, and K = 1049, tan δ = 0.027, and remanent polarization (Pr) = 32 μC cm−2 for films annealed at 800 W for 3 min. These values are comparable to those of PZT films grown by conventional deposition methods with high substrate and/or post-annealing temperatures.
Journal: Materials Science and Engineering: B - Volume 133, Issues 1–3, 25 August 2006, Pages 181–185