Gas source MBE growth and doping characteristics of AlInP on GaAs

The ternary wide bandgap AlInP alloys have been grown on GaAs substrates by using gas source molecular beam epitaxy, and the relationship between various growth parameters and the composition, lattice mismatch, surface morphology as well as doping concentration of the AlInP epi-layers have been investigated in detail. The AlInP epi-layer with lattice mismatch of +4.3 × 10−4 and full-width at half-maximum of X-ray diffraction peaks of 21.6″ and 14.9″ for epi-layer and substrate respectively have been obtained. The maximum reachable p and n type carrier concentration for Be or Si doping were found to be around 1 × 1018 and 5 × 1018 cm−3 respectively around lattice match composition.