کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1532081 | 995854 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals](/preview/png/1532081.png)
چکیده انگلیسی
Photoluminescence (PL) spectra of Ga4Se3S layered single crystals have been studied in the wavelength region of 535–855 nm and in the temperature range of 16–200 K. Two PL bands centered at 572 nm (2.168 eV, A-band) and 652 nm (1.902 eV, B-band) were observed at T = 16 K. Variations of both bands have been studied as a function of excitation laser intensity in the range 0.10–149.92 mW cm−2. The A-band is attributed to radiative transition from donor level located 0.125 eV below the bottom of conduction band to shallow acceptor level located 0.011 eV above the top of the valence band. The increase of the width of B-band and its quenching with increasing temperature is explained using the configurational coordinate model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 127, Issue 1, 15 February 2006, Pages 41–46
Journal: Materials Science and Engineering: B - Volume 127, Issue 1, 15 February 2006, Pages 41–46
نویسندگان
K. Goksen, N.M. Gasanly, A. Seyhan, R. Turan,