کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1532099 | 1512022 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere](/preview/png/1532099.png)
چکیده انگلیسی
A layer of copper was sputtered onto an indium tin oxide (ITO) glass substrates to form an ITO/Cu film, using a direct current magnetron operated at room temperature and in argon gas. The ITO and ITO/Cu films were heated in vacuum, and in hydrogen gas, to study their dependence of electronic and optical properties on annealing temperature. The resistivity of the ITO film was reduced from 6.2 × 10−4 to 2.7 × 10−4 Ω cm, and the average optical transmittance was improved to above 90% by the annealing process. The ITO/Cu film showed a low value of resistivity of 2.8 × 10−4 Ω cm and the transmittance was between 58 and 72%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 129, Issues 1–3, 15 April 2006, Pages 39–42
Journal: Materials Science and Engineering: B - Volume 129, Issues 1–3, 15 April 2006, Pages 39–42
نویسندگان
Tien-Chai Lin, Shang-Chou Chang, Chin-Fu Chiu,