Effect of implanted O on gettering of Au at dislocations in Si

The effect of implanted O on gettering of Au at dislocations in Si has been studied. FZ Si(1 1 1) wafers, implanted with Au (1.5 MeV, 2.2×10152.2×1015 atoms cm−2), were annealed for 1 h at 850° C and subsequently implanted with MeV O or Si ions. The gettering behavior of the damage layers in Si has been studied as a function of annealing temperature and time using Rutherford backscattering spectrometry. The concentration of Au gettered in the O implanted layer has been found to increase with annealing time at 850° C whereas that in the Si implanted layer remained constant. A drastic reduction in the gettering efficiency of the O implanted layer has been observed for annealing temperatures higher than 850° C. Our results indicate that gettering of Au at dislocations in Si is strongly influenced by the presence of O atoms.