کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1532767 1512196 2006 28 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Gallium nitride bulk crystal growth processes: A review
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Gallium nitride bulk crystal growth processes: A review
چکیده انگلیسی

Optoelectrical and microelectronic devices involving gallium nitride have become a challenge but their development is limited because of a lack of suitable substrates. This paper deals with the crystal growth of gallium nitride, the processes leading to GaN bulk crystals being significantly expanded during the last decade (the ones involving GaN thin films or nanocrystallites are not studied in this review). The main reviewed routes are: (i) the high pressure nitrogen solution growth (H.P.N.S.G.), (ii) the Na flux method, and (iii) the ammonothermal crystal growth.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: R: Reports - Volume 50, Issue 6, 1 January 2006, Pages 167–194
نویسندگان
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